Strain relaxation correlated with the transport properties of AIN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy

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[1] Jeganathan, Kulandaivel

[2] Ide, Toshihide

[3] Shimizu, Mitsuaki

[4] Okumura, Hajime

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Jeganathan, K. (k.jeganathan@aist.go.jp) | 1600年 / American Institute of Physics Inc.卷 / 93期

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[31] Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy [J].

Fiuczek, Natalia ;

Hajdel, Mateusz ;

Kafar, Anna ;

Muziol, Grzegorz ;

Siekacz, Marcin ;

Feduniewicz-Zmuda, Anna ;

Golyga, Oliwia ;

Skierbiszewski, Czeslaw ;

Sawicka, Marta .

OPTICAL MATERIALS EXPRESS, 2023, 13 (05) :1201-1210

[32] Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy [J].

Concordel, Alexandre ;

Jacopin, Cwenole ;

Gayral, Bruno ;

Garro, Nuria ;

Cros, Ana ;

Rouviere, Jean-Luc ;

Daudin, Bruno .

APPLIED PHYSICS LETTERS, 2019, 114 (17)

[33] Optimization of the electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy [J].

Heying, B ;

Poblenz, C ;

Elsass, C ;

Fini, P ;

DenBaars, S ;

Speck, JS ;

Smorchkova, I ;

Mishra, U .

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 :158-161

[34] Strain relaxation mechanisms in hexagonal and cubic nitride heterostructures grown by plasma-assisted molecular beam epitaxy [J].

Daudin, B ;

Feuillet, G ;

Mariette, H ;

Mula, G ;

Pelekanos, N ;

Bourret, A ;

Rouvière, JL ;

Langer, R ;

Adelmann, C ;

Martinez-Guerrero, E ;

Simon, J .

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 :78-81

[35] A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

LIN, ME ;

SVERDLOV, B ;

ZHOU, GL ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3479-3481

[36] Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN [J].

Hong, SK ;

Hanada, T ;

Ko, HJ ;

Chen, YF ;

Yao, T ;

Imai, D ;

Araki, K ;

Shinohara, M ;

Saitoh, K ;

Terauchi, M .

PHYSICAL REVIEW B, 2002, 65 (11) :1-10

[37] GAN/GAINN/GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FABRICATED USING PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

SAKAI, H ;

KOIDE, T ;

SUZUKI, H ;

YAMAGUCHI, M ;

YAMASAKI, S ;

KOIKE, M ;

AMANO, H ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A) :L1429-L1431

[38] Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy [J].

Yao, Yongzhao ;

Sekiguchi, Takashi ;

Ohgaki, Takeshi ;

Adachi, Yutaka ;

Ohashi, Naoki .

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2012, 120 (1407) :513-519

[39] Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy [J].

Shen, C. -H. ;

Chen, H. -Y. ;

Lin, H. -W. ;

Wu, C. -Y. ;

Gwo, S. ;

Klochikhin, A. A. ;

Davydov, V. Yu. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07) :2465-+

[40] SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

YANG, H ;

JENICHEN, B ;

SUZUKI, Y ;

DAWERITZ, L ;

PLOOG, KH .

PHYSICAL REVIEW B, 1995, 52 (04) :R2253-R2256

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