Submicron structures of the charge-density-wave conductor NbSe3

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作者：
Mantel, O.C. [1 ]
Chalin, F. [1 ]
Dekker, C. [1 ]
Van Der Zant, H.S.J. [1 ]
Latyshev, Yu. I. [2 ,3 ]
Pannetier, B. [2 ]
Monceau, P. [2 ]
机构：
[1] Department of Appl. Phys. and DIMES, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
[2] Ctr. Rech. sur les Tres Basses Temp., assoc. à l'Univ. Joseph F., CNRS, BP 166, 38042 Grenoble-Cedex 9, France
[3] Inst. of Radio-Engineering and E., Russian Academy of Sciences, 11 Mokhovaya Str., 103907 Moscow, Russia
来源：
Synthetic Metals | 1999年 / 103卷 / 1 -3 pt 3期
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页码：2612 / 2615
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