Transient enhanced diffusion in preamorphized silicon: The role of the surface

被引：0
|
作者：
Cowern, N.E.B. [1 ]
Alquier, D. [1 ]
Omri, M. [1 ]
Claverie, A. [1 ]
Nejim, A. [1 ]
机构：
[1] Philips Research Lab, Eindhoven, Netherlands
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 148卷 / 1-4期
关键词：
Part of this work has been funded by the Esprit LTR project RAPID. We acknowledge P. Pichler; D. Mathiot and C. Hill for stimulating discussions;
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摘要：
16
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页码：257 / 261
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