THERMODYNAMIC CALCULATIONS FOR THE CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE.

被引：0
|
作者：
Kingon, Angus I.
Lutz, Leonard J.
Davis, Robert F.
Liaw, P.
机构：
来源：
| 1600年 / 66期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] CHEMICAL VAPOR-DEPOSITION OF FLUORIDE TUNGSTEN MEASUREMENTS AND THERMODYNAMIC CALCULATIONS
    WAHL, G
    BATZIES, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : C249 - C249
  • [32] Multiscale Analysis of Silicon Carbide-Chemical Vapor Deposition Process
    Fukushima, Yasuyuki
    Hotozuka, Kozue
    Shimogaki, Yukihiro
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (09) : 7988 - 7993
  • [33] Continuous fabrication of silicon carbide fiber tows by chemical vapor deposition
    Lackey, W.Jack
    Hanigofsky, John A.
    Freeman, Garth B.
    Hardin, Regina D.
    Prasad, Ajit
    Journal of the American Ceramic Society, 1995, 78 (06): : 1564 - 1570
  • [34] The effect of the substrate on the growth of silicon carbide whiskers by chemical vapor deposition
    Lim, DC
    Choi, DJ
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2002, 3 (03): : 205 - 209
  • [35] COATINGS OF PYROCARBON AND SILICON-CARBIDE BY CHEMICAL VAPOR-DEPOSITION
    VOICE, EH
    CHEMICAL ENGINEER-LONDON, 1974, (292): : 785 - 792
  • [36] Substrate effect on the preparation of silicon carbide whiskers by chemical vapor deposition
    Leu, IC
    Lu, YM
    Hon, MH
    JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) : 607 - 611
  • [37] Chemical vapor deposition and defect characterization of silicon carbide epitaxial films
    Chen, Yi
    Dhanaraj, Govindhan
    Chen, Hui
    Vetter, William
    Dudley, Michael
    Zhang, Hui
    PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 591 - +
  • [38] Low pressure chemical vapor deposition of niobium coating on silicon carbide
    Liu, Qiaomu
    Zhang, Litong
    Cheng, Laifei
    Liu, Jinling
    Wang, Yiguang
    APPLIED SURFACE SCIENCE, 2009, 255 (20) : 8611 - 8615
  • [39] Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor
    Habuka, Hitoshi
    Fukumoto, Yusuke
    Mizuno, Kosuke
    Ishida, Yuuki
    Ohno, Toshiyuki
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (01) : N3006 - N3009
  • [40] On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
    Yazdanfar, M.
    Pedersen, H.
    Sukkaew, P.
    Ivanov, I. G.
    Danielsson, O.
    Kordina, O.
    Janzen, E.
    JOURNAL OF CRYSTAL GROWTH, 2014, 390 : 24 - 29
12345