NUMERICAL STUDY OF AN N-GALLIUM ARSENIDE DIODE DISTRIBUTED OSCILLATOR.

被引：0
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作者：
Aishima, Asuo [1 ]
Fukushima, Yoshifumi [1 ]
机构：
[1] Department of Electronics Engineering, Hiroshima University, Shitami, Saijohcho, Higashihiroshima 724, Japan
来源：
Journal of Applied Physics | 1984年 / 56卷 / 04期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE;
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摘要：
The dynamic electron velocity, electron temperature, etc. , in an n-gallium arsenide ballistic diode have been calculated by solving the Boltzmann equation under a hydrodynamic approximation. It has been found from the results that an n-gallium arsenide ballistic diode exhibits a negative conductance at a fairly high frequency range and over a wide frequency range from 1500. 0 to 2300. 0 GHz. From the small signal analysis using a simplified diode model, it has been shown that the negative conductance arises as a result of density modulation effects of the carriers, namely, space-charge transit time effects. High growth rate, up to 300. 0 Np/cm, has been predicted in an n-gallium arsenide ballistic diode distributed oscillator. The diode can be expected to act as a new solid-state source at a far infrared frequency range.
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页码：1086 / 1092
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