Vacancy defects in as-polished and in high-fluence H+-implanted 6H-SiC detected by slow positron annihilation spectroscopy

被引：0

作者：

Barthe, M.-F. ^{[1
]}

Desgardin, P. ^{[1
]}

Henry, L. ^{[1
]}

Corbel, C. ^{[1
]}

Britton, D.T. ^{[1
]}

Kögel, G. ^{[2
]}

Sperr, P. ^{[2
]}

Triftshäuser, W. ^{[2
]}

Vicente, P. ^{[3
]}

Dicioccio, L. ^{[4
]}

机构：

[1] CERI, CNRS, 3A rue de la Fárollerie, FR-45071 Orláans, France

[2] Universität der Bundeswehr München, INF, DE-85577 Neubiberg, Germany

[3] NOVASiC, Savoie Technolac, Arche Bât. 4, BP 267, FR-73375 Le Bourget du Lac, France

[4] CEA/LETI, 17 rue des Martyrs, FR-38041 Grenoble, France

来源：

Materials Science Forum | 2002年 / 389-393卷 / 01期

关键词：

Chemical mechanical polishing - Energy gap - Ion implantation - Ionization - Positron annihilation spectroscopy - Protons - Silicon carbide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The vacancy defects in near surface region are investigated in n-type 6H-SiC after polishing or low-energy-proton implantation using slow-positron-beam-based positron annihilation spectroscopy. Measuring the momentum distribution of annihilating electron-positron pairs by Doppler broadening spectroscopy we detect an about 100 nm thick vacancy-defects layer under the surface of mechanically polished wafers. No damaged layer is detected after mechano-chemical finishing. Measuring positron lifetime as a function of temperature, we show that neutral and negatively-charged vacancy clusters exist in the track region of low-energy proton-implanted 6H-SiC(H). Depending on annealing, they give rise to positron lifetimes of 257 ± 2 ps, 281 ± 4 ps and 345 ± 2 ps, respectively. By comparison with theory, the 257 ps and 280 ps are attributed to (VC-VSi) 2 and (VC-VSi)3 clusters, respectively. The (VC-VSi)3 cluster has likely an ionization level near the middle of the bandgap. © 2002 Trans Tech Publications.

引用

页码：493 / 496