Voltage shift effect on retention failure in ferroelectric memories

被引：0
|
作者：
Nakao, Keisaku [1 ]
Judai, Yuji [1 ]
Azuma, Masamichi [1 ]
Shimada, Yasuhiro [1 ]
Otsuki, Tatsuo [1 ]
机构：
[1] Matsushita Electronics Corp, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 9 B期
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页码：5203 / 5206
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