INTERACTION OF CARRIERS WITH CHARGED IMPURITIES IN HEAVILY DOPED FERROMAGNETIC SEMICONDUCTORS.

被引:0
作者
Grigin, A.P.
Nagaev, E.L.
机构
来源
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1975年 / 17卷 / 09期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
16
引用
收藏
页码:1740 / 1743
相关论文
共 50 条
  • [31] PHOTOELECTROCHEMICAL DETERMINATION OF MINORITY CHARGE-CARRIERS IN HEAVILY DOPED SEMICONDUCTORS
    MAKUTA, ID
    KULAK, AI
    DOKLADY AKADEMII NAUK BELARUSI, 1991, 35 (11): : 1000 - 1003
  • [32] Electron mobility of heavily doped semiconductors including multiple scattering by ionized impurities
    Rode, D. L.
    Cetnar, John S.
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (07)
  • [33] AMBIPOLAR DIFFUSION OF HOT CARRIERS AND NOISE IN SEMICONDUCTORS.
    Bareikis, V.
    Barkauskas, R.
    Gal'dikas, A.
    Katilyus, R.
    Soviet physics. Semiconductors, 1980, 14 (09): : 1046 - 1051
  • [34] ULTRAFAST RELAXATIONS OF PHOTOGENERATED CARRIERS IN AMORPHOUS SEMICONDUCTORS.
    Tauc, Jan
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 889 - 893
  • [35] Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities
    Ganichev, SD
    Ketterl, H
    Prettl, W
    Merkulov, IA
    Perel, VI
    Yassievich, IN
    Malyshev, AV
    PHYSICAL REVIEW B, 2001, 63 (20)
  • [36] INTERACTION OF A+(D-)CENTERS IN SEMICONDUCTORS WITH CHARGED AND NEUTRAL IMPURITIES
    ALEKSANDROV, VN
    GERSHENZON, EM
    MELNIKOV, AP
    RABINOVICH, RI
    SEREBRYAKOVA, NA
    JETP LETTERS, 1975, 22 (11) : 282 - 283
  • [37] High Figures of Merit in Degenerate Semiconductors. Energy Filtering by Grain Boundaries in Heavily Doped Polycrystalline Silicon
    Narducci, Dario
    Selezneva, Ekaterina
    Cerofolini, Gianfranco
    Frabboni, Stefano
    Ottaviani, Giampiero
    9TH EUROPEAN CONFERENCE ON THERMOELECTRICS (ECT2011), 2012, 1449 : 311 - 314
  • [38] MODEL DIELECTRIC FUNCTION FOR DOPED SEMICONDUCTORS.
    ROBERT SINGH, M.
    BALASUBRAMANIAN, S.
    1982, V 20 (N 1): : 1 - 4
  • [39] DIFFUSION IN HEAVILY DOPED SEMICONDUCTORS
    MOKHOV, EN
    KOPROV, SK
    VODAKOV, YA
    SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (12): : 3120 - 3122
  • [40] CRITICAL TRANSPORT PROPERTIES OF DOPED SEMICONDUCTORS.
    Kaveh, M.
    Mott, N.F.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1987, 55 (01): : 1 - 8