Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors

被引:0
|
作者
Lin, Jin-Jenn [1 ]
Hwu, Jenn-Gwo [1 ]
机构
[1] Natl Taiwan Univ, Tainei, Taiwan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 5 A期
关键词
27;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1290 / 1297
相关论文
共 50 条
  • [1] APPLICATION OF IRRADIATION-THEN-ANNEAL TREATMENT ON THE IMPROVEMENT OF OXIDE PROPERTIES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    LIN, JJ
    HWU, JG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1290 - 1297
  • [2] IMPROVEMENT IN RADIATION HARDNESS OF OXIDE BY SUCCESSIVE IRRADIATION-THEN-ANNEAL TREATMENTS
    HWU, JG
    FU, SL
    SOLID-STATE ELECTRONICS, 1989, 32 (08) : 615 - 621
  • [3] IMPROVEMENT OF HOT-CARRIER AND RADIATION HARDNESSES IN METAL-OXIDE-NITRIDE-OXIDE SEMICONDUCTOR-DEVICES BY IRRADIATION-THEN-ANNEAL TREATMENTS
    CHANGLIAO, KS
    HWU, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) : 612 - 614
  • [4] Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors
    Hsieh, LZ
    Ko, HH
    Kuei, PY
    Chang, LB
    Jeng, MJ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [5] InAs nanowire metal-oxide-semiconductor capacitors
    Roddaro, Stefano
    Nilsson, Kristian
    Astromskas, Gvidas
    Samuelson, Lars
    Wernersson, Lars-Erik
    Karlstrom, Olov
    Wacker, Andreas
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [6] Gas sensing properties of copper gate metal-oxide-semiconductor capacitors
    Filippini, D
    Aragón, R
    Weimar, U
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (03): : 825 - 828
  • [7] Electrical properties of MoSe2 metal-oxide-semiconductor capacitors
    Jeong, Hae In
    Park, Seonyoung
    Yang, Hae In
    Choi, Woong
    MATERIALS LETTERS, 2019, 253 : 209 - 212
  • [8] Bulk oxide traps and border traps in metal-oxide-semiconductor capacitors
    Sandia Natl Lab, Albuquerque, United States
    J Appl Phys, 11 (6141-6148):
  • [9] Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors
    Albertin, K. F.
    Pereyra, I.
    THIN SOLID FILMS, 2009, 517 (16) : 4548 - 4554
  • [10] Bulk oxide traps and border traps in metal-oxide-semiconductor capacitors
    Fleetwood, DM
    Winokur, PS
    Riewe, LC
    Reber, RA
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 6141 - 6148