Sub-threshold characteristics of polysilicon thin-film-transistors

被引：0
|
作者：
Fortunato, G. [1 ]
Meakin, D.B. [1 ]
Migliorato, P. [1 ]
机构：
[1] Istituto di Elettronica dello Stato, Solido, Italy
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期
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摘要：
16
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页码：2124 / 2127
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