BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES.

被引：0

作者：

Lowney, Jeremiah R. ^{[1
]}

机构：

[1] NBS, Gaithersburg, MD, USA, NBS, Gaithersburg, MD, USA

来源：

Solid-State Electronics | 1984年 / 28卷 / 1-2期

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摘要：

引用

页码：187 / 191

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[1] BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES
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