InP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR.

被引：0

作者：

Serreze, H.B. ^{[1
]}

Schachter, R. ^{[1
]}

Olego, D.J. ^{[1
]}

Viscogliosi, M. ^{[1
]}

机构：

[1] American Cyanamid Co, Stamford, CT,, USA, American Cyanamid Co, Stamford, CT, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 04期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS - Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated on InP using plasma-deposited amorphous phosphorus as the gate insulator. This material was selected because it provides low interface state densities (approx. 10**1**2 cm** minus **2-eV** minus **1) at the phosphorus-InP interface. The resulting 10- mu m channel length enhancement-mode transistors have a transconductance of 10 mS/mm, channel mobility of 1800 cm**2/V-s, and threshold voltage of plus 0. 6 V. Drain current drift, which has been a problem common to all reported InP MISFETs, is observed. Possible causes for its occurrence are discussed.

引用

页码：931 / 932

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