InP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR.

被引：0
|
作者：
Serreze, H.B. [1 ]
Schachter, R. [1 ]
Olego, D.J. [1 ]
Viscogliosi, M. [1 ]
机构：
[1] American Cyanamid Co, Stamford, CT,, USA, American Cyanamid Co, Stamford, CT, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 04期
关键词：
SEMICONDUCTING INDIUM COMPOUNDS - Applications;
D O I：
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中图分类号：
学科分类号：
摘要：
Metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated on InP using plasma-deposited amorphous phosphorus as the gate insulator. This material was selected because it provides low interface state densities (approx. 10**1**2 cm** minus **2-eV** minus **1) at the phosphorus-InP interface. The resulting 10- mu m channel length enhancement-mode transistors have a transconductance of 10 mS/mm, channel mobility of 1800 cm**2/V-s, and threshold voltage of plus 0. 6 V. Drain current drift, which has been a problem common to all reported InP MISFETs, is observed. Possible causes for its occurrence are discussed.
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页码：931 / 932
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