155 GHz MMIC LNAs with 12 dB gain fabricated using a high yield InP HEMT MMIC process

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TRW Electronic Space &, Technology Div, Redondo Beach, United States [1 ]
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Microwave J | / 9卷 / 166, 168-171期
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  • [1] D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process
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