RF modeling issues of deep-submicron MOSFETs for circuit design

被引：0

作者：

Cheng, Yuhua ^{[1
]}

Schroter, Michael ^{[1
]}

Enz, Christian ^{[1
]}

Matloubian, Mishel ^{[1
]}

Pehlke, David ^{[1
]}

机构：

[1] Rockwell Semiconductor Systems, Newport Beach, United States

来源：

关键词：

D O I：

暂无

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摘要：

引用

页码：416 / 419

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