Low temperature growth of heavily carbon-doped GaAs by metalorganic molecular beam epitaxy with elemental gallium

被引：0

作者：

Nagao, Keisuke ^{[1
]}

Shirakashi, Jun-ichi ^{[1
]}

Konagai, Makoto ^{[1
]}

Takahashi, Kiyoshi ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 11期

关键词：

Elemental gallium - Heavy doping - Low temperature growth - Mass flow controller - Metalorganic molecular beam epitaxy - Monomethylgallium - Trimethylgallium;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：6090 / 6094