Formation of light-emitting Si-based patterns

被引:0
|
作者
Nanjing Univ, Nanjing, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | / 5卷 / 325-328期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
相关论文
共 50 条
  • [31] Correlation between electroluminescence and charge trapping in multi-color Eu implanted Si-based light-emitting diodes
    Nazarov, A. N.
    Tyagulskyy, I. P.
    Tyagulskiy, S. I.
    Rebohle, L.
    Skorupa, W.
    Biskupek, J.
    Kaiser, U.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06): : 902 - 906
  • [32] Luminescence-based oxygen sensor structurally integrated with an organic light-emitting device excitation source and an amorphous Si-based photodetector
    Shinar, Ruth
    Ghosh, Debju
    Choudhury, Bhaskar
    Noack, Max
    Dalal, Vikram L.
    Shinar, Joseph
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1995 - 1998
  • [33] Sub-Wavelength Si-based Plasmonic Light Emitting Tunnel Junction
    Goktas, Hasan
    Sorger, Volker J.
    MICRO+NANO MATERIALS, DEVICES, AND SYSTEMS, 2015, 9668
  • [34] Green and blue light emitting devices using Si-based porous materials
    Mimura, H
    Matsumoto, T
    Kanemitsu, Y
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 961 - 964
  • [35] Growth and characterization of Si-based light-emitting diode with β-FeSi2-particles/Si multilayered active region by molecular beam epitaxy
    Sunohara, T
    Li, C
    Ozawa, Y
    Suemasu, T
    Hasegawa, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3951 - 3953
  • [36] Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy
    Sunohara, T.
    Kobayashi, K.
    Suemasu, T.
    THIN SOLID FILMS, 2006, 508 (1-2) : 371 - 375
  • [37] Thermal enhancement of 1.6 μm electroluminescence from a Si-based light-emitting diode with β-FeSi2 active region
    Li, C
    Ozawa, Y
    Suemasu, T
    Hasegawa, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (11B): : L1492 - L1494
  • [38] Air-processed stable near-infrared Si-based perovskite light-emitting devices with efficiency exceeding 7.5%
    Xu, Xiaoxiao
    Xiao, Ke
    Hou, Guozhi
    Zhu, Yu
    Zhu, Ting
    Xu, Ling
    Xu, Jun
    Chen, Kunji
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (04) : 1276 - 1281
  • [39] Formation of light-emitting Si nanostructures in SiO2 by pulsed anneals
    Kachurin, G. A.
    Cherkova, S. G.
    Marin, D. V.
    Yankov, R. A.
    Deutschmann, M.
    NANOTECHNOLOGY, 2008, 19 (35)
  • [40] Defect formation in MBE Er-doped Si light-emitting structures
    Vdovin, VI
    Sobolev, NA
    Denisov, DV
    Shek, EI
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 2005, 108-109 : 779 - 784