Formation of light-emitting Si-based patterns

被引:0
|
作者
Nanjing Univ, Nanjing, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | / 5卷 / 325-328期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
9
引用
收藏
相关论文
共 50 条
  • [1] Si-based light-emitting materials
    Hamilton, B
    SILICON-BASED MICROPHOTONICS: FROM BASICS TO APPLICATIONS, 1999, 141 : 21 - 46
  • [2] FORMATION OF Si-BASED LIGHT-EMITTING STRUCTURES BY PULSED TREATMENTS
    Batalov, R. I.
    Bayazitov, R. M.
    Krizhkov, D. I.
    Gaiduk, P. I.
    INTERNATIONAL CONFERENCE ON RADIATION INTERACTION WITH MATERIALS AND ITS USE IN TECHNOLOGIES 2008, 2008, : 39 - 42
  • [3] Si-based erbium-doped light-emitting devices
    Castagna, Maria Eloisa
    Muscara, Anna
    Leonardi, Salvatore
    Coffa, Salvatore
    Caristia, Liliana
    Tringali, Cristina
    Lorenti, Simona
    JOURNAL OF LUMINESCENCE, 2006, 121 (02) : 187 - 192
  • [4] Present research and development of Si-based light-emitting materials
    Zeng, Gang
    Yang, Hong-Chun
    Ran, Cheng-Li
    Yang, Chun
    Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 2004, 26 (04):
  • [5] Present research and the development of Si-based light-emitting materials
    Bao, Ximao
    Song, Haizhi
    Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 1997, 11 (06): : 601 - 611
  • [6] Formation of light-emitting porous Si patterns by preimplantation
    Yang, Haiqiang
    Bao, Ximao
    Yang, Zhifeng
    Hong, Jianming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (12): : 771 - 773
  • [7] A Si-based quantum-dot light-emitting diode
    Jo, M
    Ishida, K
    Yasuhara, N
    Sugawara, Y
    Kawamoto, K
    Fukatsu, S
    APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [8] A MHz Modulable Si-based LED Afforded by Engineering Light-emitting Defects in Si
    Tana-Ami, Norishige
    Igarashi, Jun
    Terada, Yosuke
    Yasutake, Yuhsuke
    Fukatsu, Susumu
    RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS, 2010, 1195
  • [9] A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV
    Tsybeskov, L
    Moore, KL
    Duttagupta, SP
    Hirschman, KD
    Hall, DG
    Fauchet, PM
    APPLIED PHYSICS LETTERS, 1996, 69 (22) : 3411 - 3413
  • [10] Si-based nanoscale SiO2 islands and light-emitting source array
    Zou, JP
    Mei, YF
    Shen, JK
    Wu, JH
    Wu, XL
    Bao, XM
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 77 (06): : 855 - 858