Epitaxial growth of Si1-x-yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

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作者：
Mi, Jian
Warren, Patricia
Gailhanou, Marc
Ganiere, Jean-Daniel
Dutoit, Michel
Jouneau, Pierre-Henri
Houriet, Raymond
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Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena | 1996年 / 14卷 / 03期
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