Theory of carbon complexes in gallium arsenide and aluminum arsenide

被引：0

作者：

Jones, R. ^{[1
]}

Oberg, S. ^{[1
]}

机构：

[1] Univ of Exeter, Exeter, United Kingdom

来源：

Materials Science Forum | 1994年 / 143-4卷 / pt 1期

关键词：

Annealing - Arsenic compounds - Carbon - Crystal defects - High temperature effects - Mathematical models - Semiconducting aluminum compounds - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

High temperature annealing of GaxAl(1-x)As:C leads to a reduction in both lattice strain and hole concentration which have been attributed to the creation of a number of defects including Ci. The structure and dynamic properties of two C interstitials as well as acceptor pairs are analyzed using first principles local density functional cluster theory. We find that Ci-CAs defects have properties in common with those formed by high temperature annealing.

引用

页码：253 / 258