Hydrogenated amorphous silicon thin film transistor fabricated on plasma treated silicon nitride

被引：19
|
作者：
Lim, Byung Cheon [1 ]
Choi, Young Jin [1 ]
Choi, Jong Hyun [1 ]
Jang, Jin [1 ]
机构：
[1] Department of Physics, Kyung Hee University, Seoul 130-701, Korea, Republic of
来源：
| 2000年 / IEEE, Piscataway, NJ, United States卷 / 47期
关键词：
Field effect mobility - Hydrogenated amorphous silicon - Plasma treatment;
D O I：
10.1109/16.822282
中图分类号：
学科分类号：
摘要：
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