NEGATIVE CAPACITANCE IN SWITCHING MISS DEVICES.

被引：0

作者：

Millan, J. ^{[1
]}

Villaronga, V. ^{[1
]}

Morante, J.R. ^{[1
]}

Serra-Mestres, F. ^{[1
]}

Herms, A. ^{[1
]}

机构：

[1] Univ Autonoma de Barcelona, Barcelona, Spain, Univ Autonoma de Barcelona, Barcelona, Spain

来源：

Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1984年 / 129 B-C卷 / 1-3期

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摘要：

The capacitance of the Al-SiO//2( less than 60 A)-Si(n)-Si(p** plus ) structure has been measured at different dc bias for several frequencies. The experimental capacitance decreases sharply as reverese dc bias is increased, passes through zero, and attains a negative value. A similar behavior is observed at low frequencies when the structure is forward biased. This unusual behavior is explained considering the interaction of the carriers with the interface states at the I-S interface and the influence of the electric field on the tunneling emission rate of these states.

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页码：351 / 355