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- [22] Aluminum incorporation into 4H-SiC layers during epitaxial growth in a hot-wall CVD system SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 207 - 210
- [24] Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 161 - 164
- [25] Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 109 - 112
- [26] Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 243 - 246
- [29] Growth of AlN films by hot-wall CVD and sublimation techniques:: Effect of growth cell pressure SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1469 - 1472
- [30] Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 991 - 994