PECVD OF SILICON EPITAXIAL LAYERS.

被引：0
|
作者：
Donahue, T.J. [1 ]
Reif, R. [1 ]
机构：
[1] MIT, Dep of Electrical Engineering, & Computer Science, Cambridge,, MA, USA, MIT, Dep of Electrical Engineering & Computer Science, Cambridge, MA, USA
来源：
Semiconductor International | 1985年 / 8卷 / 08期
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摘要：
SEMICONDUCTING SILICON
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页码：142 / 146
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