共 50 条
- [1] ANOMALOUS ROOM-TEMPERATURE IMPURITY PHOTOCONDUCTIVITY OF MERCURY-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 861 - 863
- [2] NEUTRAL IMPURITY SCATTERING IN MERCURY-DOPED GERMANIUM PHYSICAL REVIEW B, 1980, 22 (02): : 743 - 748
- [5] PHOTOELECTRIC PROPERTIES OF MERCURY-DOPED GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 502 - +
- [6] IMPURITY PHOTOCONDUCTIVITY OF EXACTLY COMPENSATED n-TYPE GERMANIUM. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1977, 11 (05): : 532 - 534
- [7] LIFETIME OF MINORITY CARRIERS IN MERCURY-DOPED GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (11): : 2736 - +
- [8] A COMPARISON OF THE PERFORMANCE OF COPPER-DOPED GERMANIUM AND MERCURY-DOPED GERMANIUM DETECTORS INFRARED PHYSICS, 1963, 3 (03): : 129 - 137
- [9] INFLUENCE OF MERCURY CONCENTRATION ON INTENSITY OF EXCITATION SPECTRUM OF MERCURY-DOPED GERMANIUM PHYSICS LETTERS, 1966, 21 (05): : 512 - &