Determination of the planarization distance for copper CMP process

被引：0
|
作者：
Hymes, S. [1 ]
Smekalin, K. [1 ]
Brown, T. [1 ]
Yeung, H. [1 ]
Joffe, M. [1 ]
Banet, M. [1 ]
Park, T. [1 ]
Tugbawa, T. [1 ]
Boning, D. [1 ]
Nguyen, J. [1 ]
West, T. [1 ]
Sands, W. [1 ]
机构：
[1] SEMATECH, Austin, United States
来源：
Materials Research Society Symposium - Proceedings | 2000年 / 566卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：211 / 216
相关论文
共 50 条
  • [1] Determination of the planarization distance for copper CMP process
    Hymes, S
    Smekalin, K
    Brown, T
    Yeung, H
    Joffe, M
    Banet, M
    Park, T
    Tugbawa, T
    Boning, D
    Nguyen, J
    West, T
    Sands, W
    CHEMICAL-MECHANICAL POLISHING - FUNDAMENTALS AND CHALLENGES, 2000, 566 : 211 - 216
  • [2] Evaluation of planarization capability of copper slurry in the CMP process
    尹康达
    王胜利
    刘玉岭
    王辰伟
    李湘
    Journal of Semiconductors, 2013, 34 (03) : 133 - 136
  • [3] Evaluation of planarization capability of copper slurry in the CMP process
    Yin Kangda
    Wang Shengli
    Liu Yuling
    Wang Chenwei
    Li Xiang
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (03)
  • [4] Advanced chemical mechanical planarization (CMP) process for copper interconnects
    Hara, T
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 386 - 390
  • [5] Copper CMP evaluation: planarization issues
    Fayolle, M
    Romagna, F
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 135 - 141
  • [6] Evaluation of planarization capability of copper slurry in the CMP process附视频
    尹康达
    王胜利
    刘玉岭
    王辰伟
    李湘
    Journal of Semiconductors, 2013, (03) : 133 - 136
  • [7] Copper CMP evaluation: Planarization issues
    CEA-G-GRESSI/LETI, Grenoble, France
    Microelectron Eng, (135-141):
  • [8] Determination of process margin and global planarization characteristics in the direct STI-CMP process
    Yong-Jin Seo
    Sang-Yong Kim
    Journal of Materials Science: Materials in Electronics, 2004, 15 : 363 - 367
  • [9] Determination of process margin and global planarization characteristics in the direct STI-CMP process
    Seo, YJ
    Kim, SY
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (06) : 363 - 367
  • [10] Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process
    Nguyen, VH
    Daamen, R
    Hoofman, R
    MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) : 95 - 99
12345