The quantum mobility of a two-dimensional electron gas in selectively doped GaAsInGaAs quantum wells with embedded quantum dots

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作者：
Pagnossin, I.R. [1 ]
Da Silva, E.C.F. [1 ]
Quivy, A.A. [1 ]
Martini, S. [2 ]
Sergio, C.S. [3 ]
机构：
[1] Instituto de Física Da Universidade de São Paulo, Laboratório de Novos Materiais Semiconductores (LNMS), CP 66318, SP 05315-970, São Paulo, Brazil
[2] Faculdade de Tecnologia e Cîncias Exatas Da Universidade São Judas Tadeu, Núcleo de Pesquisa Em Microelectrônica e Dispositivos Optoelectrônicos, SP 03166-000, São Paulo, Brazil
[3] Universidade Federal Do Amazonas, Instituto de Cîncias Exatas, Departamento de Física, Manaus 69077-000, Amazonas, Brazil
来源：
| 1600年 / American Institute of Physics Inc.卷 / 97期
关键词：
Number:; -; Acronym:; CNPq; Sponsor: Conselho Nacional de Desenvolvimento Científico e Tecnológico; 98/12779-0; FAPESP; Sponsor: Fundação de Amparo à Pesquisa do Estado de São Paulo; 01/14106-8; 02/10185-3; 01/11310-3;
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