Deposition and crystallisation behaviour of amorphous silicon thin films obtained by pyrolysis of disilane gas at very low pressure

被引：0

作者：

Kretz, T. ^{[1
]}

Pribat, D. ^{[1
]}

Legagneux, P. ^{[1
]}

Plais, F. ^{[1
]}

Huet, O. ^{[1
]}

Magis, M. ^{[1
]}

机构：

[1] Thomson-CSF LCR, Orsay, France

来源：

Materials Research Society Symposium - Proceedings | 1994年 / 345卷

关键词：

Annealing - Chemical vapor deposition - Crystallization - Curve fitting - Electric resistance measurement - Gases - In situ processing - Monitoring - Pyrolysis - Semiconducting silicon - Vacuum applications;

D O I：

10.1557/proc-345-123

中图分类号：

学科分类号：

摘要：

High purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En approx. 2.8 eV, compared to En approx. 3.7 eV for the completely amorphous ones.

引用

页码：123 / 128