Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

被引：0
|
作者：
Osinski, Marek [1 ]
Barton, Daniel L. [1 ]
Perlin, Piotr [1 ]
Lee, Jinhyun [1 ]
机构：
[1] Univ of New Mexico, Albuquerque, United States
来源：
Journal of Crystal Growth | / 189-190卷
关键词：
Degradation - Electron energy levels - Semiconducting aluminum compounds - Semiconducting gallium compounds - Semiconducting indium compounds - Semiconductor lasers - Semiconductor quantum wells - Stress analysis;
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摘要：
We report on high-electrical-stress testing of Nichia GaN/InGaN/AlGaN single-quantum-well (SOW) light-emitting diodes. In contrast to our earlier experiments with double-heterostructure LEDs, the present SQW devices have been improved to the point that the encapsulating plastic fails under high electrical stress earlier than the diode itself.
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页码：808 / 811
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