TRANSFORMATION OF THE SIZE OF CLUSTERS OF INTRINSIC POINT DEFECTS IN SEMICONDUCTORS.

被引：0
|
作者：
Ital'yantsev, A.G.
Mordkovich, V.N.
机构：
来源：
Soviet physics. Semiconductors | 1983年 / 17卷 / 02期
关键词：
CRYSTALS; -; Defects;
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
A model is proposed for the transformation of the size of clusters of intrinsic point defects in elemental semiconductors under the influence of external agencies on a crystal. An analysis is made of the interaction between such clusters and a binary solid solution of mobile interstitial atoms and vacancies. The conditions for changes in the cluster dimensions are determined. A qualitative study is made of the transformation of clusters as a result of heat treatments in various atmospheres and as a result of irradiation. This is compared with the experimental data for Si. An estimate is obtained of the binding energy of atoms in type A clusters of growth origin observed in single crystals of dislocation-free silicon (2. 2-2. 8 eV).
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页码：140 / 144
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