Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

被引：0

作者：

Monroy, E. ^{[1
]}

Hermann, M. ^{[2
]}

Sarigiannidou, E. ^{[1
]}

Andreev, T. ^{[1
]}

Holliger, P. ^{[3
]}

Monnoye, S. ^{[4
]}

Mank, H. ^{[4
]}

Daudin, B. ^{[1
]}

Eickhoff, M. ^{[2
]}

机构：

[1] Equipe Mixte CEA-CNRS-UJF N.S., DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

[2] Walter Schottky Institute, Technical University Munich, Am Coulombwall 3, D-85748 Garching, Germany

[3] DRT/LETI/DTS, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

[4] Novasic, Savoie Technolac, l'Arche no4, 73375 Le Bourget du Lac, France

来源：

Journal of Applied Physics | 2004年 / 96卷 / 07期

关键词：

Activation energy - Doping (additives) - High energy electron diffraction - Monolayers - Optoelectronic devices - Photoluminescence - Structural analysis - Substrates - Transmission electron microscopy - X ray diffraction analysis - Zinc;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The polytype conversion of a GaN film from N-face wurtzite to zinc-blende was investigated. The optical characteristics of GaN:Mg layers are very sensitive to the presence of the cubic polytype. Structural analysis by high-resolution transmission electron microscopy and high-resolution x-ray diffraction measurement revealed alignment of the cubic phase with the [111] axis perpendicular to the substrate surface. A cubic-related donor-acceptor transition at ∼3.16 eV is also observed, together with a broad blue band around 2.9 eV.

引用

页码：3709 / 3715

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