Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures

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Universite des Sciences et, Technologies de Lille, Villeneuve d'Ascq, France ^{[1
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J Cryst Growth | / 2卷 / 209-216期

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Many thanks are due to Dr. J. Massies (CRHEA; Sophia Antipolis; France) for providing the InGaAs samples and for very helpful discussions. This work has been partly supported by DRET (Minist~re de la Ddfense);

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