Silicon nitride film for high-mobility thin-film transistor by hybrid-excitation chemical vapor deposition

被引：0
|
作者：
Yamamoto, Shigeichi [1 ]
Migitaka, Masatoshi [1 ]
机构：
[1] Toyota Technological Inst, Nagoya, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 1 B期
关键词：
27;
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暂无
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摘要：
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页码：462 / 468
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