共 50 条
- [43] Variable I-V characteristics method applied to model the electrical behavior of an irradiated P-N junction. Extension to the junction in an irradiated transistor RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1996, 138 (1-2): : 17 - 28
- [44] P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 207 - 212
- [45] The Characteristics of GeSn p-n Junction Devices Fabricated by Molecular Beam Epitaxy 2016 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM), 2016, : 1 - 2
- [47] On the tensosensitivity of a p-n junction under illumination Semiconductors, 2015, 49 : 819 - 822
- [49] RECOMBINATION RADIATION OF A P-N JUNCTION IN INAS SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2036 - &