INFLUENCE OF SIZE QUANTIZATION ON THE CONDUCTION IN A METAL-OXIDE-SEMICONDUCTOR SYSTEM.

被引：0
|
作者：
Rogovskaya, E.T.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 06期
关键词：
ELECTRIC CONDUCTIVITY - Mathematical Models;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Approximate calculation of the I-V characteristic of a MOS at T does not equal 0 K is made assuming that the metal electrode is in the form of a thin film.
引用
收藏
页码：811 / 812
相关论文
共 50 条
  • [21] INFLUENCE OF OXIDE CHARGE ON MINORITY-CARRIER LIFETIME IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
    MEINERTZHAGEN, A
    ELRHARBI, S
    JOURDAIN, M
    APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2222 - 2224
  • [22] INVESTIGATION OF INFLUENCE OF METAL SURFACE IMPURITIES IN SILICON ON PROPERTIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
    RAKOV, AV
    KOROLEV, MA
    PAVLOV, EA
    PETROVA, AG
    SHEPOVAL.GA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 433 - &
  • [23] INFLUENCE OF OXIDE THICKNESS ON THE TRANSPORT-PROPERTIES OF SILICON METAL-OXIDE-SEMICONDUCTOR SYSTEMS
    GOLD, A
    APPLIED PHYSICS LETTERS, 1986, 48 (06) : 439 - 441
  • [24] Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors
    Hsieh, LZ
    Ko, HH
    Kuei, PY
    Chang, LB
    Jeng, MJ
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
  • [25] Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems
    Fan, Jung-Chuan
    Lee, Shih-Fong
    INTERNATIONAL SYMPOSIUM ON MATERIALS APPLICATION AND ENGINEERING (SMAE 2016), 2016, 67
  • [26] Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system
    Lye, WK
    Hasegawa, E
    Ma, TP
    Barker, RC
    Hu, Y
    Kuehne, J
    Frystak, D
    APPLIED PHYSICS LETTERS, 1997, 71 (17) : 2523 - 2525
  • [27] Injection electroluminescence from quantum-size InGaAs/GaAs structures with metal/semiconductor and metal-oxide-semiconductor junctions
    M. V. Dorokhin
    P. B. Demina
    N. V. Baidus’
    Yu. A. Danilov
    B. N. Zvonkov
    M. M. Prokof’eva
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2010, 4 : 390 - 394
  • [28] Injection electroluminescence from quantum-size InGaAs/GaAs structures with metal/semiconductor and metal-oxide-semiconductor junctions
    Dorokhin, M. V.
    Demina, P. B.
    Baidus', N. V.
    Danilov, Yu. A.
    Zvonkov, B. N.
    Prokof'eva, M. M.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (03) : 390 - 394
  • [29] METAL-OXIDE-SEMICONDUCTOR NO2 SENSOR
    INOUE, T
    OHTSUKA, K
    YOSHIDA, Y
    MATSUURA, Y
    KAJIYAMA, Y
    SENSORS AND ACTUATORS B-CHEMICAL, 1995, 25 (1-3) : 388 - 391
  • [30] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    MAVOR, J
    PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1463 - &
12345