INFLUENCE OF SIZE QUANTIZATION ON THE CONDUCTION IN A METAL-OXIDE-SEMICONDUCTOR SYSTEM.

被引：0
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作者：
Rogovskaya, E.T.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1973年 / 7卷 / 06期
关键词：
ELECTRIC CONDUCTIVITY - Mathematical Models;
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学科分类号：
摘要：
Approximate calculation of the I-V characteristic of a MOS at T does not equal 0 K is made assuming that the metal electrode is in the form of a thin film.
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页码：811 / 812
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