High field transport of hot electrons in strained Si/SiGe heterostructure

被引：0
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作者：
Miyatsuji, Kazuo
Ueda, Daisuke
Masaki, Kazuo
Yamakawa, Shinya
Hamaguchi, Chihiro
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 4B期
关键词：
Electrons;
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页码：2378 / 2380
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