High field transport of hot electrons in strained Si/SiGe heterostructure

被引：0
|
作者：
Miyatsuji, Kazuo
Ueda, Daisuke
Masaki, Kazuo
Yamakawa, Shinya
Hamaguchi, Chihiro
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1994年 / 33卷 / 4B期
关键词：
Electrons;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2378 / 2380
相关论文
共 50 条
  • [1] High field transport of hot electrons in strained Si/SiGe heterostructure
    Miyatsuji, Kazuo
    Ueda, Daisuke
    Masaki, Kazuo
    Yamakawa, Shinya
    Hamaguchi, Chihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2378 - 2380
  • [2] HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI/SIGE HETEROSTRUCTURE
    MIYATSUJI, K
    UEDA, D
    MASAKI, K
    YAMAKAWA, S
    HAMAGUCHI, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2378 - 2380
  • [3] HIGH-FIELD TRANSPORT OF HOT-ELECTRONS IN STRAINED SI/SIGE HETEROSTRUCTURES
    MIYATSUJI, K
    UEDA, D
    MASAKI, K
    YAMAKAWA, S
    HAMAGUCHI, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 772 - 774
  • [4] THERMAL RELAXATION OF STRAINED SIGE/SI HETEROSTRUCTURE
    SHIGEKAWA, H
    KANAYA, H
    CHO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (05): : L736 - L738
  • [5] Thermal relaxation of strained SiGe/Si heterostructure
    Shigekawa, Hidemi, 1600, (29):
  • [6] Plasma etching induced damage to strained Si/SiGe/Si heterostructure
    Swain, PK
    Misra, D
    Cole, M
    1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1996, : 133 - 136
  • [7] High field transport in strained Si/GeSi double heterostructure: A Fokker-Planck approach
    Comas, F
    Studart, N
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7880 - 7884
  • [8] Investigation of strained Si/SiGe-OI heterostructure with high resolution electron microscope
    Ma, Tongda
    Tu, Hailing
    Shao, Beiling
    Chen, Changchun
    Huang, Wentao
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2004, 25 (09): : 1123 - 1127
  • [9] Sub-micron strained Si:SiGe heterostructure MOSFETs
    Clifton, PA
    Lavelle, SJ
    ONeill, AG
    MICROELECTRONICS JOURNAL, 1997, 28 (6-7) : 691 - 701
  • [10] Transport anisotropies in a Si/SiGe heterostructure induced by an in-plane magnetic field
    Zeitler, U
    Schumacher, HW
    Haug, RJ
    Jansen, AGM
    PHYSICA B, 2001, 298 (1-4): : 501 - 504
12345