0.5 Watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

被引：0
|
作者：
Kobayashi, K.W. [1 ]
Oki, A.K. [1 ]
Yang, Li-W. [1 ]
Gutierrez-Aitken, A. [1 ]
Chin, P. [1 ]
Sawdai, Don [1 ]
Okamura, W. [1 ]
Lester, J. [1 ]
Kaneshiro, E. [1 ]
Grossman, P.C. [1 ]
Sato, K. [1 ]
Block, T.R. [1 ]
Yen, H.C. [1 ]
Streit, D.C. [1 ]
机构：
[1] TRW Electronics and Technology Div, Redondo Beach, United States
来源：
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2000年
关键词：
Power added efficiency (PAE);
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：250 / 253
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