Thermal stability of interconnect TiN/Cu/TiN multilayered structure

被引：0

作者：

Igarashi, Yasushi ^{[1
]}

Yamanobe, Tomomi ^{[1
]}

Yamaji, Tetsuo ^{[1
]}

Nishikawa, Satoshi ^{[1
]}

Ito, Toshio ^{[1
]}

机构：

[1] Oki Electric Industry Co, Ltd, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期

关键词：

Annealing - Copper - Corrosion prevention - Diffusion in solids - Electric conductivity - Etching - Film preparation - Thermodynamic stability - Thick films - Titanium compounds - ULSI circuits;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The etching process for a Cu interconnect with self-aligned deposition of a thick sidewall film has been developed. This sidewall film acts as a barrier layer to prevent Cu from corrosion and oxidation during the subsequent process, such as formation of a passivation film. Using this etching process, the Cu interconnect of a TiN/Cu/TiN multilayered structure in a submicron feature is formed. Resistivity for the Cu interconnects is about 2 μΩ&middotcm, and it does not change on annealing up to 700 °C. Diffusion of impurities into Cu is not observed up to 800 °C annealing. Therefore, the structure of the Cu interconnect, that is, Cu covered with TiN and the thick sidewall film, is suitable for the ULSI process.

引用

页码：462 / 465