P-n junction creation in 6H-SiC by aluminum implantation

被引：0
|
作者：
Ottaviani, L. [1 ]
Locatelli, M.L. [1 ]
Planson, D. [1 ]
Isoird, K. [1 ]
Chante, J.P. [1 ]
Morvan, E. [2 ]
Godignon, P. [2 ]
机构：
[1] CEGELY, INSA de Lyon, Bât. 401, 20 avenue Einstein, F-69621 Villeurbanne Cedex, France
[2] Centro Nacional de Microelectronica, UAB, 08193 Bellaterra, Barcelona, Spain
来源：
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 61卷
关键词：
Aluminum - Amorphization - Annealing - Crystallization - Ion implantation - Semiconducting silicon compounds - Semiconductor diodes - Silicon carbide;
D O I：
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页码：424 / 428
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