OPTICAL BISTABILITY AT THE ABSORPTION EDGE OF SEMICONDUCTORS.

被引：0
|
作者：
Henneberger, F. [1 ]
机构：
[1] Humboldt-Univ zu Berlin, Berlin, East Ger, Humboldt-Univ zu Berlin, Berlin, East Ger
来源：
Physica Status Solidi (B) Basic Research | 1986年 / 137卷 / 02期
关键词：
LIGHT - Nonlinear Optical Effects - SEMICONDUCTING CADMIUM COMPOUNDS - Optical Properties - SEMICONDUCTING GALLIUM COMPOUNDS - Optical Properties - SEMICONDUCTING INDIUM COMPOUNDS - Optical Properties - SEMICONDUCTING TELLURIUM - Optical Properties;
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学科分类号：
摘要：
The present article attempts to summarize some recent developments from the point of view of a semiconductor physicist. It deals with that area of basic research where OB and semiconductor optics overlap. The paper treats the fundamental physical mechanisms giving rise to optical non-linearity at the band edge of a semiconductor and also describes how OB can achieved by combining these non-linearities with feedback. Device-related aspects are only marginally considered.
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页码：371 / 432
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