OPTICAL BISTABILITY AT THE ABSORPTION EDGE OF SEMICONDUCTORS.

被引：0

作者：

Henneberger, F. ^{[1
]}

机构：

[1] Humboldt-Univ zu Berlin, Berlin, East Ger, Humboldt-Univ zu Berlin, Berlin, East Ger

来源：

Physica Status Solidi (B) Basic Research | 1986年 / 137卷 / 02期

关键词：

LIGHT - Nonlinear Optical Effects - SEMICONDUCTING CADMIUM COMPOUNDS - Optical Properties - SEMICONDUCTING GALLIUM COMPOUNDS - Optical Properties - SEMICONDUCTING INDIUM COMPOUNDS - Optical Properties - SEMICONDUCTING TELLURIUM - Optical Properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The present article attempts to summarize some recent developments from the point of view of a semiconductor physicist. It deals with that area of basic research where OB and semiconductor optics overlap. The paper treats the fundamental physical mechanisms giving rise to optical non-linearity at the band edge of a semiconductor and also describes how OB can achieved by combining these non-linearities with feedback. Device-related aspects are only marginally considered.

引用

页码：371 / 432