Simulations on back gate effects of a-Si TFT off-current under illumination

被引：1

作者：

Nishida, S. ^{[1
]}

Takechi, K. ^{[1
]}

Hirano, N. ^{[1
]}

Uchida, H. ^{[1
]}

机构：

[1] NEC Corp, Kawasaki, Japan

来源：

Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期

关键词：

Amorphous materials - Display devices - Mathematical models - Numerical methods - Silicon - Simulators - Solid state physics - Transistors;

D O I：

10.1016/0022-3093(93)91107-E

中图分类号：

学科分类号：

摘要：

We have analysed numerically back gate effects of a-Si TFT under illumination with a 2-dimensional device simulator. In this simulator, all localized states were taken into account as recombination centers and as charge trapping centers by Shockley-Read-Hall statistics according to the Simmons-Taylor's analysis. The simulation results explain well the enhancement of the TFT OFF current under illumination and the shoulder-like increase of the dark OFF current which were generally observed experimentally.

引用

页码：755 / 758

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