Simulations on back gate effects of a-Si TFT off-current under illumination

被引：1
|
作者：
Nishida, S. [1 ]
Takechi, K. [1 ]
Hirano, N. [1 ]
Uchida, H. [1 ]
机构：
[1] NEC Corp, Kawasaki, Japan
来源：
Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期
关键词：
Amorphous materials - Display devices - Mathematical models - Numerical methods - Silicon - Simulators - Solid state physics - Transistors;
D O I：
10.1016/0022-3093(93)91107-E
中图分类号：
学科分类号：
摘要：
We have analysed numerically back gate effects of a-Si TFT under illumination with a 2-dimensional device simulator. In this simulator, all localized states were taken into account as recombination centers and as charge trapping centers by Shockley-Read-Hall statistics according to the Simmons-Taylor's analysis. The simulation results explain well the enhancement of the TFT OFF current under illumination and the shoulder-like increase of the dark OFF current which were generally observed experimentally.
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页码：755 / 758
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