Spontaneous polysilicon and epitaxial silicon deposition

被引：0

作者：

Mieno, Fumitake ^{[1
]}

Tukune, Atsuhito ^{[1
]}

Miyata, Hiroshi ^{[1
]}

Shimizu, Atsuo ^{[1
]}

Furumura, Yuji ^{[1
]}

机构：

[1] Fujitsu Ltd, Iwate, Japan

来源：

Journal of the Electrochemical Society | 1995年 / 142卷 / 05期

关键词：

Boundary layers - Electric heating - Epitaxial growth - Low temperature phenomena - Oxidation - Pressure effects - Reactive ion etching - Scanning electron microscopy - Semiconducting silicon compounds - Semiconductor device manufacture - Silicon wafers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A spontaneous polysilicon and epitaxial silicon deposition (SPED) process for fabricating high performance submicron devices was developed using Si2H6 as a silicon source gas under low pressure and temperature. SPED was achieved at 8000 Pa and 830°C, even for a 0.2 μm thick film on a substrate with a 0.5 μm SiO2 step. The defect density of the epilayer was less than 0.3/cm2. This SPED layer did not have facets at the transition region.

引用

页码：1590 / 1594

共 50 条

[1] SPONTANEOUS POLYSILICON AND EPITAXIAL SILICON DEPOSITION
MIENO, F
TUKUNE, A
MIYATA, H
SHIMIZU, A
FURUMURA, Y
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) : 1590 - 1594
[2] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ
JOYCE, BA
BICKNELL, RW
CHARIG, JM
STIRLAND, DJ
SOLID STATE COMMUNICATIONS, 1963, 1 (05) : 107 - 108
[3] SELECTIVE EPITAXIAL DEPOSITION OF SILICON
JOYCE, BD
BALDREY, JA
NATURE, 1962, 195 (4840) : 485 - &
[4] EPITAXIAL DEPOSITION OF SILICON IN NITROGEN
GITTLER, FL
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 271 - +
[5] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ
BICKNELL, RW
STIRLAND, DJ
CHARIG, JM
JOYCE, BA
PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 965 - &
[6] Numerical and experimental study of polysilicon deposition on silicon tubes
Cai, D
Zheng, LL
Wan, Y
Hariharan, AV
Chandra, M
JOURNAL OF CRYSTAL GROWTH, 2003, 250 (1-2) : 41 - 49
[7] EPITAXIAL DEPOSITION OF SILICON ON QUARTZ AND ALUMINA
JOYCE, BA
BENNETT, RJ
BICKNELL, RW
ETTER, PJ
TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (03): : 556 - &
[8] EPITAXIAL DEPOSITION OF SILICON IN DEEP GROOVES
SMELTZER, RK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1666 - 1671
[9] OXIDE DEPOSITION IN SILICON EPITAXIAL SYSTEMS
HART, PB
ELECTROCHEMICAL TECHNOLOGY, 1967, 5 (7-8): : 365 - &
[10] Modeling of epitaxial silicon carbide deposition
Veneroni, Alessandro
Omarini, Fabrizio
Moscatelli, Davide
Masi, Maurizio
Leone, Stefano
Mauceri, Marco
Pistone, Giuseppe
Abbondanza, Giuseppe
JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E295 - E300

← 1 2 3 4 5 →