MODEL OF ELECTRICAL CONDUCTION IN POLYCRYSTALLINE SILICON.

被引：0

作者：

Dinesh Prasad Joshi ^{[1
]}

Ram Sahai Srivastava ^{[1
]}

机构：

[1] D. B. S. (P. G. ) Coll, Dep of, Physics, Dehra Dun, India, D. B. S. (P. G. ) Coll, Dep of Physics, Dehra Dun, India

来源：

IEEE Transactions on Electron Devices | 1984年 / ED-31卷 / 07期

关键词：

ELECTRIC CONDUCTIVITY - Mathematical Models - ELECTRIC SPACE CHARGE;

D O I：

暂无

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学科分类号：

摘要：

This paper presents a modified version of the conduction model for polycrystalline silicon which includes the thermionic field emission of carriers through the space-charge potential barrier, carrier tunneling through the grain-boundary rectangular potential barrier after being thermally emitted over the space-charge barriers, and the thermionic emission of carriers over these barriers. it is found that if the height of the space-charge potential barrier is much smaller than the height of the grain-boundary barrier, the conduction is mainly controlled by the second mechanism. As grain size decreases, the contribution to current by second mechanism increases. The model predicts that the grain-boundary width in phosphorus-doped polycrystalline silicon film is a strong function of dopant concentration at intermediate dopant concentrations, while the grain-boundary width in boron-doped polycrystalline silicon is independent of dopant concentration in the range of 10**1**6 to 5 multiplied by 10**1**9 cm** minus **3.

引用

页码：920 / 927