LIQUID-PHASE-EPITAXIAL GROWTH OF AlxGa1 - xAs - 2. EXPERIMENTS ON CRYSTAL GROWTH.

Crystal growth and characterization of LPE Al//xGa//1// minus //xAs were investigated. Weights of GaAs sufficient to saturate Ga melt containing Al at various temperatures were experimentally determined and compared with their calculated values. They were in fairly good agreement within the experimental accuracy. Variation of solid composition in the direction of growth in the LPE layer was measured by cathode luminescence and compared with the theoretical prediction. The variation is explained by taking account of nucleation in a diffusion limited process. As for the quality of grown crystal, slightly undersaturated solutions result in crystals with a lustrous and smooth surface, and they are found to be of high quality by photoluminescence and studies using an ion microprobe analyzer.