NUMERICAL ANALYSIS ON DYNAMIC PERFORMANCE OF AMORPHOUS-SILICON TRANSISTOR CIRCUITS.

被引：0

作者：

Okada, Hiroyuki ^{[1
]}

Uchida, Yasutaka ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Tokyo Inst of Technology, Faculty of, Engineering, Tokyo, Jpn, Tokyo Inst of Technology, Faculty of Engineering, Tokyo, Jpn

来源：

Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E | 1986年 / E69卷 / 01期

关键词：

SEMICONDUCTING SILICON - Amorphous - TRANSISTORS; FIELD EFFECT - Performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The dynamic performance of amorphous-silicon transistor circuits has been numerically analyzed. A novel dynamic circuit composed of amorphous-silicon Schottky-barrier diodes and field effect transistors has been shown to have a superior performance, and the optimum circuit parameters have been discussed. The circuit having 1 mu m-long, self-aligned transistors has been predicted to be operable at multi-MHz rates.

引用

页码：56 / 63