Heavy ion and proton-induced single event multiple upset

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作者：

Naval Research Lab, Washington, United States ^{[1
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来源：

IEEE Trans Nucl Sci | / 6 pt 1卷 / 2224-2229期

关键词：

CMOS integrated circuits - Computer simulation - Computer software - Ionization of solids - Monte Carlo methods - Protons - Radiation effects;

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摘要：

Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees.

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