PERSISTENT PHOTOCONDUCTIVITY CONTROL IN GaAs CHANNEL AlGaAs GATE DEVICES.

被引：0

作者：

Anon

机构：

来源：

IBM technical disclosure bulletin | 1986年 / 29卷 / 02期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

暂无

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摘要：

Persistent photoconductivity that may cause a shift in switching threshold and changes in transconductance in GaAs channel AlGaAs gate devices can be controlled by an n-type doped buffer layer in the substrate. The structure is shown.

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